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| Part Number | 2SD2082 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2082 |
| Manufacturer | Sanken electric |
| Title | Silicon NPN Transistor |
| Description | Darlington 2SD2082 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=8A IC=8A, IB=16mA IC=8A, IB=16mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2082 10max 10max 120min 2000min 1.5max 2.5max 20typ 210typ V V 16.2 Equivalent cir. |
| Features |
5.45±0.1 1.5
0.65 +0.2 -0.1
3.35
B
C
E
Weight : Approx 2.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical) A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 16 (V C E =4V) A 26 40m 20 m 12 m A 6mA 20 Collector Current I C (A) 3mA 2 1. 5m A I C =16A 8A 1 4A Collec. |
| Part Number | 2SD2082 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= 8A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 8A, IB= 16mA) ·Complement to Type 2SB1382 ·Minimum Lot-to-Lot variations for robust device performance and reliable . |
| Features | LECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 16mA VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 16mA ICBO Collector Cutoff Current VCB= 120V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC. |
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