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2SD812 |
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| Part Number | 2SD812 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB747 ·Minimum Lot-to-Lot variations for robust device performance a... |
| Features |
er Saturation Voltage IC= 3A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
hFE-3
DC Current Gain
IC= 3A; VCE= 5V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
hFE-2 Classifications R Q P 40-80 60-120 100-200 2SD812 MIN TYP. MAX UNIT 2.0 V 1.8 V 50 μA 50 μA 20 40 200 20 90 pF 15 MHz NOTICE： ISC reserves the ri... |
| Document |
 2SD812 Data Sheet
PDF 209.54KB |
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Desde 2024. D4U Semiconductor.
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