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| Part Number | 2SD817 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD817 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low collector saturation voltage ·Wide area of safe operation ·With TO-3 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for high voltage power switching TV horizontal deflection output. |
| Features | n Voltage IE= 1mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.2A; IB= 0.3A MIN MAX UNIT 6 V 600 V 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.2A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain VCB=800V;IB= 0 VEB= 6V; IC=0 IC= 0.3A ; VCE= 5V 10 uA. |
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Desde 2024. D4U Semiconductor.
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