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2SD553 |
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| Part Number | 2SD553 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 4A ·Complement to Type 2SB553 ·Minimum Lot-to-Lot variations for robust... |
| Features |
NS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 70V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 1V
hFE-2
DC Current Gain
IC= 4A ; VCE= 1V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 4V
Switching Times
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
VCC= 30V; RL= 10Ω; IB1= IB2= 0.3A; Duty Cycle≤1%
MI... |
| Document |
 2SD553 Data Sheet
PDF 209.45KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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