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2SC3087 |
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| Part Number | 2SC3087 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : V(BR)CBO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desi... |
| Features |
500
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
V
VCE(sat) VBE(sat)
ICBO
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current
IC= 3A; IB= 0.6A IC= 3A; IB= 0.6A VCB= 500V; IE=0
1.0
V
1.5
V
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
10
μA
hFE-1
DC Current Gain
IC= 0.6A; VCE= 5V
15
50
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
8
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 0.6A; VCE= 10V
80
pF... |
| Document |
 2SC3087 Data Sheet
PDF 191.09KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3082K |
ROHM |
NPN Silicon Transistor |
|
| 2 | 2SC3083 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC3083 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3083 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC3085 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | 2SC3085 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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