2SC3083 |
Part Number | 2SC3083 |
Manufacturer | INCHANGE |
Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
Features |
mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.4A; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.4A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
Switching Times
ton
Turn-on Time
tstg
Storage Ti... |
Document |
2SC3083 Data Sheet
PDF 216.20KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC3082K |
ROHM |
NPN Silicon Transistor | |
2 | 2SC3083 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
3 | 2SC3083 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC3085 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | 2SC3085 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
6 | 2SC3086 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |