Busque con el número de pieza junto con el fabricante o la descripción
2SB1507 |
Click to view a larger image
| Part Number | 2SB1507 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2280 ·Minimum Lot-to-Lot variations for robust device perfo... |
| Features |
lector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1m A; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -2V
hFE-2
DC Current Gain
IC= -5A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -2A; RL= 10Ω, IB1= -IB2= -0.2A, VCC= -20V
hFE-1... |
| Document |
 2SB1507 Data Sheet
PDF 222.87KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1502 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1502 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor |
|
| 3 | 2SB1502 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1503 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 5 | 2SB1503 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB1503 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor |
|
Desde 2024. D4U Semiconductor.
|