2SC5305 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SC5305

INCHANGE
2SC5305
2SC5305 2SC5305
zoom Click to view a larger image
Part Number 2SC5305
Manufacturer INCHANGE
Description ·High Breakdown Voltage :V(BR)CBO= 1200V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for inverter lighting a...
Features 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A hFE-1 DC Current Gain IC= 0.3A; VCE= 5V hFE-2 DC Current Gain IC= 2.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 600V; IE= 0 ICES Collector Cutoff Current VCE= 1200V; RBE= 0 IEBO Emitter Cutoff Current VEB= 9V; IC= 0 2SC5305 MIN TYP. MAX UNIT 600 V 1.0 V 1.5 V 30 50 10 10 μA 1.0 mA 1.0 mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of o...

Document Datasheet 2SC5305 Data Sheet
PDF 208.82KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SC5300
Sanyo Semicon Device
NPN TRANSISTOR Datasheet
2 2SC5301
Sanyo Semicon Device
NPN TRANSISTOR Datasheet
3 2SC5302
Sanyo Semicon Device
NPN TRANSISTOR Datasheet
4 2SC5302
INCHANGE
NPN Transistor Datasheet
5 2SC5303
Sanyo Semicon Device
NPN TRANSISTOR Datasheet
6 2SC5304LS
Sanyo Semicon Device
NPN TRANSISTOR Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad