Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SC5302 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC5302 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage :VCBO= 1500V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO . |
| Features | n Voltage IC= 12A; IB= 3A VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB= 3A ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 ICBO Collector Cutoff Current VCB= 800V; IE= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 12A; VCE= 5V 2SC5302 MIN TYP. MAX UNIT 800 V 5 V 1.5 V 1 mA 1 mA 10 μA 20 30 4 7. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5300 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5301 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SC5303 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 4 | 2SC5304LS |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 5 | 2SC5305 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC5305 |
UTC |
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR |
|
| 7 | 2SC5305LS |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 8 | 2SC5307 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC5310 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 10 | 2SC5310 |
Kexin |
NPN Epitaxial Planar Silicon Transistors |
|
Desde 2024. D4U Semiconductor.
|