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2SB1151 |
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| Part Number | 2SB1151 |
| Manufacturer | INCHANGE |
| Description | ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·Complement to 2SD1691 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... |
| Features |
ector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A; VCE= -1V
hFE-2
DC Current Gain
IC= -2A; VCE= -1V
hFE-3
DC Current Gain
IC= -5A; VCE= -2V
hFE-2 Classifications M L K 100-200 160-320 200-400 2SB1151 MIN TYP. MAX UNIT -0.3 V -1.2 V -10 μA -10 μA 60 100 400 50 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. Th... |
| Document |
 2SB1151 Data Sheet
PDF 217.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1150 |
NEC |
PNP Transistor |
|
| 2 | 2SB1151 |
SeCoS |
PNP Transistor |
|
| 3 | 2SB1151 |
NEC |
PNP Silicon Transistor |
|
| 4 | 2SB1151 |
UTC |
PNP SILICON TRANSISTOR |
|
| 5 | 2SB1151 |
INCHANGE |
TO-252 PNP Transistor |
|
| 6 | 2SB1151 |
Savantic |
Silicon PNP Power Transistors |
|
| 7 | 2SB1152 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 8 | 2SB1153 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 9 | 2SB1154 |
Panasonic Semiconductor |
PNP Transistor |
|
| 10 | 2SB1154 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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