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2SB1020 |
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| Part Number | 2SB1020 |
| Manufacturer | INCHANGE |
| Description | ·High DC C urrent Gain- : hFE= 2000(Min.)@IC= -3A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1415 ·Minimum Lot-to-Lot variations fo... |
| Features |
herwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage
IC= -3A; IB= -6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage
IC= -7A; IB= -14mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -6mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -3A; VCE= -3V
hFE-2
DC Current Gain
IC= -7A; VCE= -3V
2SB1020
MIN TYP. MAX UNIT
-100
V
-1.5
V
-2.0
V
-2.5
V
-100 μA
-4.0
mA
2000
15000
1000
NOT... |
| Document |
 2SB1020 Data Sheet
PDF 209.97KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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