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2SB885 |
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| Part Number | 2SB885 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE = 1500(Min)@ IC= -2.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SD1195 ·Minimum Lot-... |
| Features |
CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA, IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2.5A, IB= -5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -2.5A, IB= -5mA
ICBO
Collector Cutoff Current
VCB= -80V, IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -2.5A; VCE= -3V
2SB885
MIN TYP. MAX UNIT
-100
V
-110
V
-1.5
V
-2.0
V
-100 μA
-3
mA
1500
NOTICE： ISC reserves the rights to mak... |
| Document |
 2SB885 Data Sheet
PDF 210.21KB |
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Desde 2024. D4U Semiconductor.
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