Distributor | Stock | Price | Buy |
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2SB881 |
Part Number | 2SB881 |
Manufacturer | Inchange Semiconductor |
Title | Silicon PNP Power Transistor |
Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3.5A ·Complement to Type 2SD1191 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for m. |
Features | CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA, RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3.5A, IB= -7mA VBE(sat) Base-Emitter Saturation Voltage IC= -3.5A, IB= -7mA ICBO Collector Cutoff Current VCB= -40V, IE= 0 IEBO Emitter . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB880 |
Sanyo Semicon Device |
PNP Transistor | |
2 | 2SB880 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SB880 |
INCHANGE |
PNP Transistor | |
4 | 2SB882 |
Sanyo Semicon Device |
PNP Transistor | |
5 | 2SB882 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
6 | 2SB883 |
Sanyo Semicon Device |
PNP Transistor | |
7 | 2SB883 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
8 | 2SB884 |
Sanyo Semicon Device |
PNP Transistor | |
9 | 2SB884 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SB884 |
INCHANGE |
PNP Transistor |