2SB880 |
Part Number | 2SB880 |
Manufacturer | INCHANGE |
Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1190 ·Minimum Lot-to-L... |
Features |
CTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA, RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA, IE= 0
VCE(sat) Collector-Emitter Saturation Voltage
IC= -2A, IB= -4mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A, IB= -4mA
ICBO
Collector Cutoff Current
VCB= -40V, IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -2A; VCE= -2V
2SB880
MIN TYP. MAX UNIT
-60
V
-70
V
-1.5
V
-2.0
V
-100 μA
-3
mA
2000
NOTICE: ISC reserves the rights to make changes of... |
Document |
2SB880 Data Sheet
PDF 210.25KB |
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