2SB880 INCHANGE PNP Transistor Datasheet. existencias, precio

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2SB880

INCHANGE
2SB880
2SB880 2SB880
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Part Number 2SB880
Manufacturer INCHANGE
Description ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1190 ·Minimum Lot-to-L...
Features CTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA, RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -4mA VBE(sat) Base-Emitter Saturation Voltage IC= -2A, IB= -4mA ICBO Collector Cutoff Current VCB= -40V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -2A; VCE= -2V 2SB880 MIN TYP. MAX UNIT -60 V -70 V -1.5 V -2.0 V -100 μA -3 mA 2000 NOTICE: ISC reserves the rights to make changes of...

Document Datasheet 2SB880 Data Sheet
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