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2SB612 |
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| Part Number | 2SB612 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD582 ·Minimum Lot-to-Lot variations for robust device performance and... |
| Features |
wn Voltage IC= -30mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -7A; VCE= -5V
hFE-1 Classifications A B C 35-70 60-120 100-200 2SB612 MIN TYP. MAX UNIT -140 V -6 V -1.5 V -1.5 V -10 μA 35 200 20 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T... |
| Document |
 2SB612 Data Sheet
PDF 207.33KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB611 |
INCHANGE |
Silicon PNP Power Transistor |
|
| 2 | 2SB613 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB616 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB616 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB617 |
ETC |
Silicon Triple Diffused Transistor |
|
| 6 | 2SB617A |
ETC |
Silicon Triple Diffused Transistor |
|
Desde 2024. D4U Semiconductor.
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