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2SB600 |
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| Part Number | 2SB600 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·High Power Dissipation- : PC= 200W(Max)@TC=25℃ ·Complement to Type 2SD555 ·Minimum Lot-to-Lot variations for robust device performance and... |
| Features |
tter Saturation Voltage
IC= -10A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -50mA; VCE= -5V
hFE-2
DC Current Gain
IC= -2A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product IC= -1A; VCE= -10V
hFE-2 Classifications S R Q 40-80 60-120 100-200 2SB600 MIN TYP. MAX UNIT -3.0 V -3.0 V -0.1 mA -0.1 mA 20 40 200 400 pF 4 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notificati... |
| Document |
 2SB600 Data Sheet
PDF 211.00KB |
Desde 2024. D4U Semiconductor.
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