2SB554 INCHANGE PNP Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SB554

INCHANGE
2SB554
2SB554 2SB554
zoom Click to view a larger image
Part Number 2SB554
Manufacturer INCHANGE
Description ·High Power Dissipation- : PC= 150W@TC= 25℃ ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SD424 ·Minimum Lot-to-Lot variations for robust device performance and...
Features ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 5V ICBO Collector Cutoff Current VCB= 90V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 2A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 2A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz MIN TYP. MAX UNIT -180 V -5 V -3.0 V -2.5 V -0.1 mA -0.1 mA 40 140 5 MHz 300 pF
 hFE-2 Classifications R O 40-80 70-140 NOTICE: ISC reserves the rights to...

Document Datasheet 2SB554 Data Sheet
PDF 210.14KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SB550
SavantIC
SILICON POWER TRANSISTOR Datasheet
2 2SB550
INCHANGE
PNP Transistor Datasheet
3 2SB551
SavantIC
SILICON POWER TRANSISTOR Datasheet
4 2SB551
INCHANGE
PNP Transistor Datasheet
5 2SB552
Toshiba
SILICON PNP TRANSISTOR Datasheet
6 2SB552
SavantIC
SILICON POWER TRANSISTOR Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad