KSC2752 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

KSC2752

INCHANGE
KSC2752
KSC2752 KSC2752
zoom Click to view a larger image
Part Number KSC2752
Manufacturer INCHANGE
Description ·High breakdown voltage ·Complementary to KSA1156 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The KSC2752 i...
Features mA VBE(sat) Base-Emitter Saturation Voltage IC=0.3A; IB= 60mA ICBO Collector Cutoff Current VCB= 500V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 50mA ; VCE= 5V hFE-2 DC Current Gain IC= 0.3A ; VCE= 5V
 hFE-1 Classifications R O Y 20-40 30-60 40-80 KSC2752 MIN TYP. MAX UNIT 1.0 V 1.2 V 10 μA 10 μA 20 80 10 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC produ...

Document Datasheet KSC2752 Data Sheet
PDF 206.49KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 KSC2751
Samsung semiconductor
NPN Epitaxial Silicon Transistor Datasheet
2 KSC2751
Fairchild Semiconductor
NPN Epitaxial Silicon Transistor Datasheet
3 KSC2752
Fairchild Semiconductor
NPN Epitaxial Silicon Transistor Datasheet
4 KSC2755
Samsung semiconductor
NPN Epitaxial Silicon Transistor Datasheet
5 KSC2756
Samsung semiconductor
NPN Epitaxial Silicon Transistor Datasheet
6 KSC2756
Fairchild Semiconductor
NPN Epitaxial Silicon Transistor Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad