Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | KSC2751 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | KSC2751 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | KSC2751 KSC2751 High Speed High Current Switching Industrial Use TO-3P NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curre. |
| Features | t Condition IC = 10A, IB1= 2A, L = 50µH IC = 10A, IB1= -IB2 = 2A TC =125°C, l = 180µH, Clamped IC = 20A, IB1 = 4A, -IB2 = 2A TC= 125°C, L = 180µH,Clamped VCB = 400V, IE = 0 VCE = 400V, RBE = 50Ω @ TC = 125°C VCE = 400V, VBE(off) = -1.5V VCE = 400V, VBE(off) = -1.5V @ TC = 125Ω VEB = 5V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A VCE = 5V, IC = 10A IC = 10A, IB = 2A IC = 10A, IB = 2A VCC = 150V, IC. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KSC2752 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 2 | KSC2752 |
INCHANGE |
NPN Transistor |
|
| 3 | KSC2755 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | KSC2756 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 5 | KSC2756 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 6 | KSC2757 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 7 | KSC2758 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 8 | KSC2759 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 9 | KSC2710 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 10 | KSC2710 |
Fairchild Semiconductor |
Low Frequency Power Amplifier |
|
Desde 2024. D4U Semiconductor.
|