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BUV62A |
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| Part Number | BUV62A |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
C=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage
IC= 15A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 1.5A
ICEO
Collector Cutoff Current
VCE= 300V; IB=0
ICBO
Collector Cutoff Current
VCB= 400V; IE=0
hFE
DC Current Gain
IC= 5A; VCE= 4V
BUV62A
MIN MAX UNIT
300
V
400
V
7
V
0.9
V
1.3
V
1.0 mA
1.0 mA
40
50
NOTICE：... |
| Document |
 BUV62A Data Sheet
PDF 200.05KB |
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Desde 2024. D4U Semiconductor.
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