BUV61 Datasheet. existencias, precio

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BUV61 HIGH POWER NPN SILICON TRANSISTOR


BUV61
Part Number BUV61
Distributor Stock Price Buy
Inchange Semiconductor
BUV61
Part Number BUV61
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·High Current Capability ·Fully characterized at 125℃ ·Fast switching speed ·Motor control ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.
Features ilicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12.5A; IB= 0.625A IC= 12.5A; IB= 0.625A; Tj= 100℃ VCE (sat)-2 Collector-Emitter Saturation Voltage .
Seme LAB
BUV61
Part Number BUV61
Manufacturer Seme LAB
Title Bipolar NPN Device
Description BUV61 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1.47 (0.058) 1.60 (.
Features Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 1-Aug-02 .

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