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BU2525A |
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| Part Number | BU2525A |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use... |
| Features |
con NPN Power Transistor
BU2525A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A; IB= 1.6A
VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃
VEB= 7.5V; IC= 0
1.3
V
1.0 2.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
6
13 26
hFE-2
DC Current Gain
COB
Output Capacitance
... |
| Document |
 BU2525A Data Sheet
PDF 208.18KB |
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Desde 2024. D4U Semiconductor.
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