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| Part Number | BU2525AF |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BU2525AF |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collecto. |
| Features | ctor cut-off current Emitter cut-off current DC current gain DC current gain Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=1mA ;IC=0 IC=8A ;IB=1.6 A IC=8A ;IB=1.6 A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 IC=0.1A ; VCE=5V IC=8A ; VCE=5V IE=0; f=1MHz;VCB=10V 5 MIN 800 7.5 www.datasheet4u.com BU2525AF SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 CC TYP. MAX UNIT V 1. |
| Part Number | BU2525AF |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S. |
| Features | BU2525AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Cur. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BU2525A |
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Silicon Diffused Power Transistor |
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| 2 | BU2525A |
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| 3 | BU2525A |
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| 4 | BU2525AW |
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| 5 | BU2525AW |
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| 6 | BU2525AX |
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| 7 | BU2525AX |
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| 8 | BU2525AX |
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| 9 | BU2525DF |
NXP |
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| 10 | BU2525DF |
SavantIC |
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|
Desde 2024. D4U Semiconductor.
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