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BU508DR |
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| Part Number | BU508DR |
| Manufacturer | INCHANGE |
| Description | ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·De... |
| Features |
TERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
700
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 100mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.6A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
hFE -1
DC Current Gain
IC= 4.5A; IB= 2A
VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC= 125℃
IC= 2.5A; VCE= 5V
4.5
1.5
V
0.5 2.0
mA
hFE -2
DC Current Gain
IC= 4.5A; VCE= 5V
3.2
fT
Current-Gain—Bandwidth Product... |
| Document |
 BU508DR Data Sheet
PDF 213.70KB |
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Desde 2024. D4U Semiconductor.
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