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BDT61F |
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| Part Number | BDT61F |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BDT60F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as compleme... |
| Features |
registered trademark
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BDT61F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0 VCB= 40V; IE= 0; TC= 150℃
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 3V
hFE-2
DC Curre... |
| Document |
 BDT61F Data Sheet
PDF 209.44KB |
Desde 2024. D4U Semiconductor.
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