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3DD13009 |
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| Part Number | 3DD13009 |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A ·100% tested ·Minimum Lot-to-... |
| Features |
perature Range
-65~150 ℃
isc website：www.iscsemi.com
1
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD13009
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A ;IB= 3A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A ;IB= 1A
VBE(sat)-2 Base-Emitte... |
| Document |
 3DD13009 Data Sheet
PDF 212.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD13001 |
GME |
High Voltage Fast Switching NPN Power Transistor |
|
| 2 | 3DD13001 |
Jiangsu Changjiang Electronics |
TRANSISTOR |
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| 3 | 3DD13001 |
TRANSYS Electronics |
Plastic-Encapsulated Transistors |
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| 4 | 3DD13001 |
SeCoS |
NPN Transistor |
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| 5 | 3DD13001 |
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NPN Transistors |
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| 6 | 3DD13001 |
WEJ |
NPN Transistor |
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| 7 | 3DD13001A |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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| 8 | 3DD13001A1 |
Huajing Microelectronics |
Silicon NPN Transistor |
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| 9 | 3DD13001B |
JCST |
TO-92 Plastic-Encapsulate Transistors |
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| 10 | 3DD13001H |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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