Busque con el número de pieza junto con el fabricante o la descripción
2SC3076 |
Click to view a larger image
| Part Number | 2SC3076 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V (Max.)@ IC= 1A ·Complementary to 2SA1241 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI... |
| Features |
llector-Emitter Saturation Voltage IC= 1A; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 50mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2
DC Current Gain
IC= 1.5A; VCE= 2V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE=2V
MIN TYP. MAX UNIT
0.5
V
1.2
V
50
V
1
uA
1
uA
70
240
40
30
pF
80
MHz
hFE-1 Classifications O 70-140 Y 120-240 isc we... |
| Document |
 2SC3076 Data Sheet
PDF 246.50KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3070 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SC3071 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC3072 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3072 |
Kexin |
Silicon NPN Transistor |
|
| 5 | 2SC3073 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC3074 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|