2N5109 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2N5109

INCHANGE
2N5109
2N5109 2N5109
zoom Click to view a larger image
Part Number 2N5109
Manufacturer INCHANGE
Description ·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable o...
Features ) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 0.5 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 10mA; VCE= 10V 40 150 fT Current-Gain—Bandwidth Product IC= 50mA;VCE= 10V;f= 200MHz 1200 MHz COB Output Capacitance IE= 0;VCB= 28V; ftest= 1.0MHz 3.3 pF Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products a...

Document Datasheet 2N5109 Data Sheet
PDF 183.99KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2N5102
RCA Solid State
RF Power Devices Datasheet
2 2N5108
Advanced Semiconductor
NPN SILICON HIGH FREQUENCY TRANSISTOR Datasheet
3 2N5108
Motorola
HIGH FREQUENCY TRANSISTOR Datasheet
4 2N5108
INCHANGE
Silicon NPN Power Transistor Datasheet
5 2N5109
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Datasheet
6 2N5109
Motorola
HIGH FREQUENCY TRANSISTOR Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad