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| Part Number | 2N5108 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N5108 |
| Manufacturer | Motorola |
| Title | HIGH FREQUENCY TRANSISTOR |
| Description | 2N5108 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (Rbe = 10(7) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a Tq = 25°C Derate above 25°C Storage Temperature Symbol vCEO VCER v CBO v EBO •c PD Tstg Value 30 55 . |
| Features | . |
| Part Number | 2N5108 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose Class C amplifier applications up to 1 GHz ABS. |
| Features | ) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 0.5 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 10mA; VCE= 10V 40 150 fT Current-Gain—Bandwidth Product IC= 50mA;VCE= 10V;f= 200MHz 1200 MHz COB Output Capacitance IE= 0;VCB= 28V; ftest= 1.0MHz 3.3 pF Notice： ISC reserves the rights . |
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Desde 2024. D4U Semiconductor.
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