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NE5511279A |
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| Part Number | NE5511279A |
| Manufacturer | CEL |
| Description | The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technolo... |
| Features |
• High output power • High power added efficiency • High linear gain • Surface mount package • Single supply : Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA) : add = 48% TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : add = 50% TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA) : GL = 15.0 dB TYP. (f = 900 MHz, VDS = 7.5 , Pin = 5 dBm V, IDset = 400 mA) : GL = 18.5 dB TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 5 dBm, IDset = 400 mA) : 5.7 5.7 1.1 mm MAX. :... |
| Document |
 NE5511279A Data Sheet
PDF 797.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE5511279A |
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