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NTBG020N120SC1 |
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| Part Number | NTBG020N120SC1 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L NTBG020N120SC1 Features • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Spee... |
| Features |
• Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VDSS 1200 V VGS −15/+25 V VGSop −5/+20 V Continuous Drain C... |
| Document |
 NTBG020N120SC1 Data Sheet
PDF 341.75KB |
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Desde 2024. D4U Semiconductor.
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