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C3M0032120D |
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| Part Number | C3M0032120D |
| Manufacturer | CREE |
| Description | VDS 1200 V C3M0032120D ID @ 25˚C 63 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC... |
| Features |
Package
• 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Solar inverters • EV motor drive • High voltage DC/DC converters • Switched mode power supplies Part Number Package Marking C3M0032120D Maximum Ra... |
| Document |
 C3M0032120D Data Sheet
PDF 786.19KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C3M0032120D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 2 | C3M0032120J1 |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 3 | C3M0032120K |
CREE |
Silicon Carbide Power MOSFET |
|
| 4 | C3M0032120K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 5 | C3M0030090K |
CREE |
Silicon Carbide Power MOSFET |
|
| 6 | C3M0030090K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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