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TK12E80W |
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| Part Number | TK12E80W |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | MOSFETs Silicon N-Channel MOS (DTMOS) TK12E80W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA)
3. Packaging and Internal Circuit
TK12E80W
1: Gate 2: Drain (Heatsink) 3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Reverse drain current (DC) R... |
| Document |
 TK12E80W Data Sheet
PDF 414.87KB |
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Desde 2024. D4U Semiconductor.
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