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PHP18NQ10T |
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| Part Number | PHP18NQ10T |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co... |
| Features |
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
DC-to-DC converters
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C
VGS =... |
| Document |
 PHP18NQ10T Data Sheet
PDF 777.47KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | PHP18NQ10T |
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N-channel TrenchMOS transistor |
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| 2 | PHP18NQ11T |
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N-channel MOSFET |
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| 3 | PHP18NQ11T |
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Desde 2024. D4U Semiconductor.
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