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4N30M |
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| Part Number | 4N30M |
| Manufacturer | Fairchild Semiconductor |
| Description | The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Applications ■ Low Power Logic Circuits ■ Telecommu... |
| Features |
■ High Sensitivity to Low Input Drive Current ■ Meets or Exceeds All JEDEC Registered Specifications ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute ■ DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Description The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Applications ■ Low Power Logic Circuits ■ Telecommunications Equipment ■ Portable Electronics ■ Solid State Relays ■ Interfacing Coupling Systems of Different Potentials and Impedances Schematic ANODE 1 C... |
| Document |
 4N30M Data Sheet
PDF 304.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 4N30 |
Motorola Inc |
6-Pin DIP Optoisolators |
|
| 2 | 4N30 |
Toshiba Semiconductor |
PHOTO TRANSISTOR |
|
| 3 | 4N30 |
QT Optoelectronics |
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS |
|
| 4 | 4N30 |
Fairchild Semiconductor |
(4N30 - 4N3) General Purpose 6-Pin Photodarlington Optocoupler |
|
| 5 | 4N30 |
CT Micro |
Photodarlington Optocoupler |
|
| 6 | 4N30Z |
UNISONIC TECHNOLOGIES |
40A 300V N-CHANNEL POWER MOSFET |
|
| 7 | 4N31 |
Motorola Inc |
6-Pin DIP Optoisolators |
|
| 8 | 4N31 |
Toshiba Semiconductor |
PHOTO TRANSISTOR |
|
| 9 | 4N31 |
QT Optoelectronics |
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS |
|
| 10 | 4N31 |
Fairchild Semiconductor |
(4N30 - 4N3) General Purpose 6-Pin Photodarlington Optocoupler |
|
Desde 2024. D4U Semiconductor.
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