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4N30 Photodarlington Optocoupler

4N30

4N30
4N30 4N30
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Part Number 4N30
Manufacturer CT Micro
Description The 4N29, 4N30, 4N31, 4N32, and 4N33 series consist of a photodarlington transistor optically coupled to an Infrared-emitting diode in a 6-lead DIP DMC-Isolator® package with different lead forming options. Applications • Switch mode power supplies • Computer peripheral interface • Microprocessor system interface Package Outline Schematic Note: Different .
Features
• High isolation 5000 VRMS
• Patented coplanar structure DMC-Isolator®
• DC input with Transistor output
• Operating Temperature range - 55 °C to 100 °C
• External Creepage ≥ 7.4mm
• Distance Through Isolation ≥ 0.4mm
• Clearance Distance ≥ 7.5mm (S/SL Type)
• Clearance Distance ≥ 8.0mm (M/SLM Type)
• RoHS and REACH Compliance
• Halogen Free Compliance (Optional)
• MSL class 1
• Regulatory Approvals ✓ UL - UL1577 (E364000) ✓ VDE - EN60747-5-5(VDE0884-5) ✓ CQC
  – GB4943.1, GB8898 (14001105802) ✓ IEC62368 (FI/41119) 4N29, 4N30, 4N31, 4N32, 4N33 DC Input 6-Pin DMC-Isolator® Photodarlington Optoco.
Datasheet Datasheet 4N30 Data Sheet
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4N30

Motorola  Inc
4N30
Part Number 4N30
Manufacturer Motorola Inc
Title 6-Pin DIP Optoisolators
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series i.
Features e above 25°C OUTPUT DETECTOR Collector
  –Emitter Voltage Emitter
  –Collector Voltage Collector
  –Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(3) Storage Temperature Range(3.


4N30

Toshiba Semiconductor
4N30
Part Number 4N30
Manufacturer Toshiba Semiconductor
Title PHOTO TRANSISTOR
Description .
Features .


4N30

QT Optoelectronics
4N30
Part Number 4N30
Manufacturer QT Optoelectronics
Title GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS
Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current • Meets or exceeds all JEDEC Registered Specifications • VDE 0884 approval available .
Features
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option -add option .300. (e.g., 4N29.300) SCHEMATIC ANODE 1 6 BASE APPLICATIONS




• Low power logic circuits Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials and impedances. CA.


4N30

Fairchild Semiconductor
4N30
Part Number 4N30
Manufacturer Fairchild Semiconductor
Title (4N30 - 4N3) General Purpose 6-Pin Photodarlington Optocoupler
Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Specifications ■ VDE 0884 approval available as a test option – add option .300. (e.g., 4N29.300) Applications ■ Low power logic circuits ■ Telecommunications equipment .
Features
■ High sensitivity to low input drive current
■ Meets or exceeds all JEDEC Registered tm Description The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Specifications
■ VDE 0884 approval available as a test option
  – add option .300. (e.g., 4N29.300) Applications
■ Low power logic circuits
■ Telecommunications equipme.


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