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40N10F7 |
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| Part Number | 40N10F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
| Features |
Order code STL40N10F7
VDS 100 V
RDS(on) max. 0.024Ω
ID 10 A
PTOT 5W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL40N10F7 Table 1: Device summary Marking Package 40N10F7 PowerFLATTM 5x6... |
| Document |
 40N10F7 Data Sheet
PDF 1.12MB |
Desde 2024. D4U Semiconductor.
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