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80N10 |
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| Part Number | 80N10 |
| Manufacturer | IXYS |
| Description | HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V ID25 = 80 A RDS(on) = 12.5 mΩ trr ≤ 200 ns Symbol VDSS VDGR... |
| Features |
l International standard packages l Low RDS (on) l Rated for unclamped Inductive load
switching (UIS) l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l Easy to mount l Space savings l High power density
© 2000 IXYS All rights reserved
98739 (8/00)
Symbol
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
Test Conditions
Characteristic Values
(T J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test 35 55 S 4800 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 1460 pF 490 pF 41 ns VGS = 10 V, VDS = 0.5 • V... |
| Document |
 80N10 Data Sheet
PDF 88.95KB |
Desde 2024. D4U Semiconductor.
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