Busque con el número de pieza junto con el fabricante o la descripción
3N126 |
Click to view a larger image
| Part Number | 3N126 |
| Manufacturer | ETC |
| Description | 3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier applications in the audio through VHF frequency range... |
| Features |
high breakdown voltage, low transfer capacitance, and tetrode configuration for a broad range of applications.
CASE 20
TO-72
O2 o
STYLE4 PIN 1. SOURCE 2. GATE
10 0 3
3. DRAIN
o 4. GATE2-
4 ~~~~TRATE AND
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Gate-Source Voltage Gate 1 Gate 2
Drain-Source Voltage
Drain-Gate Voltage Gate I Gate 2
Gate 1-Gate 2 Current
Gate 2-Gate 1 Current
Gate Current
Gate I Gate 2
Drain Current
Junction Operating Temperature
Storage Temperature Range
Total Device Dissipation @ TA = 25°C Derate Above 25°C
Total Device Dissipation @ TC = 25°C Dera... |
| Document |
 3N126 Data Sheet
PDF 308.79KB |
Desde 2024. D4U Semiconductor.
|