Busque con el número de pieza junto con el fabricante o la descripción
BCX70GLT1 |
Click to view a larger image
| Part Number | BCX70GLT1 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCX70GLT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 45 45 5.0 200 Unit Vdc V... |
| Features |
ACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter – Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES — — IEBO — 20 20 20 nAdc mAdc nAdc 45 5.0 — — Vdc Vdc 0.062 in. 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BCX70GLT1 BCX70JLT1 BCX70KLT1 ELECTRICAL CHARACTE... |
| Document |
 BCX70GLT1 Data Sheet
PDF 427.82KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCX70GLT1 |
Leshan Radio Company |
NPN Transistor |
|
| 2 | BCX70GLT1 |
ON Semiconductor |
General Purpose Transistors |
|
| 3 | BCX70G |
Samsung semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 4 | BCX70G |
Fairchild Semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 5 | BCX70G |
NXP |
NPN general purpose transistors |
|
| 6 | BCX70G |
Siemens Semiconductor Group |
NPN Silicon AF Transistors |
|
Desde 2024. D4U Semiconductor.
|