BCW61DLT1 |
Part Number | BCW61DLT1 |
Manufacturer | Motorola Inc |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW61BLT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE BCW61BLT1 BCW61CLT1 BCW61DLT1 3 MAXIMUM RATINGS Rating Collecto... |
Features |
CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = –32 Vdc) (VCE = –32 Vdc, TA = 150°C) 1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES — — –20 –20 nAdc µAdc –32 –5.0 — — Vdc Vdc 0.062 in. 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BCW61BLT1 BCW61CLT1 BCW61DLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Conti... |
Document |
BCW61DLT1 Data Sheet
PDF 394.84KB |
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