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BFP181W |
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| Part Number | BFP181W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive de... |
| Features |
C Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 5 mA, VCE = 8 V
Semiconductor Group
2
Aug-30-1996
BFP 181W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
6 8 0.24 0.27 0.32 -
GHz pF 0.4 dB 1.45 1.... |
| Document |
 BFP181W Data Sheet
PDF 59.87KB |
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