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BFP180W |
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| Part Number | BFP180W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic disch... |
| Features |
ter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
8 100 -
V µA 100 nA 100 µA 1 30 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 10 V, VBE = 0
Collector-base cutoff current
VCB = 8 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 1 mA, VCE = 5 V
Semiconductor Group
2
Dec-12-1996
BFP 180W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
5 7 0.22 0.27 0.1 -
GHz pF ... |
| Document |
 BFP180W Data Sheet
PDF 59.04KB |
Similar Datasheet
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