Busque con el número de pieza junto con el fabricante o la descripción
1SS322 |
Click to view a larger image
| Part Number | 1SS322 |
| Manufacturer | Kexin |
| Description | SMD Type Diodes LOW VOLTAGE HIGH SPEED SWITCHING 1SS322 Features Low forward voltage:VF(3) = 0.54 V(Typ) Low reverse current:trr = 5 A (Typ) A bsolute M axim um R atings T a = 25 Param eter M axi... |
| Features |
Low forward voltage:VF(3) = 0.54 V(Typ) Low reverse current:trr = 5 A (Typ)
A bsolute M axim um R atings T a = 25
Param eter M axim um (peak) reverse voltage R everse voltage M axim um (peak) forward current Average forward Current P ower dissipation Junction Tem perature Storage Tem perature range (*) U nit rating.Total rating = U nit rating
Sym bol VRM VR IFM IO P Tj T stg
1.5
R ating 45 40 300 100 100 125
-55 to +125
U nit V V
mA mA mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current Total capacitance
Symbol VF(1) VF(2) VF(3) IR Ct
Test Conditions IF = 1... |
| Document |
 1SS322 Data Sheet
PDF 39.02KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS321 |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Type Diode |
|
| 2 | 1SS321 |
SEMTECH ELECTRONICS |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
|
| 3 | 1SS321 |
Guangdong Kexin Industrial |
LOW VOLTAGE HIGH SPEED SWITCHING |
|
| 4 | 1SS322 |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Type Diode |
|
| 5 | 1SS300 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 6 | 1SS300 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES |
|
Desde 2024. D4U Semiconductor.
|