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G3J |
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| Part Number | G3J |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | VISHAY Standard Sinterglass Diode G3A / B / D / G / J / K / M Vishay Semiconductors Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction ... |
| Features |
• High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction • Hermetically sealed package • 3.0 ampere operation at Tamb= 70 °C with no ther- mal runaway Mechanical Data Case: Sintered glass case, G-3 17132 Terminals: Solder plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 1100 mg Parts Table G3A Part G3B G3D G3G G3J G3K G3M Type differentiation Package VRRM = 50 V G-3 VRRM = 100 V G-3 VRRM = 200 V G-3 VRRM = 400 V G-3 VRRM = 600 V G-3 ... |
| Document |
 G3J Data Sheet
PDF 111.20KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G30 |
MACOM |
Voltage-Controlled Attenuator Module |
|
| 2 | G3000TF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 3 | G3000TF450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor |
|
| 4 | G3018 |
GTM |
N-CHANNEL MOSFET |
|
| 5 | G3018K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 6 | G301K |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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