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BSP52 |
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| Part Number | BSP52 |
| Manufacturer | Fairchild Semiconductor |
| Description | BSP52 BSP52 NPN Darlington Transistor • This device is designed for applications requiring extremly high current gain at collector currents to 500mA. • Sourced from process 03. 2 1 4 3 SOT-223 1. ... |
| Features |
Conditions IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCE = 80V, VBE = 0 VEB = 4.0V, IC = 0 IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 500mA, IB = 0.5mA IC = 500mA, IB = 0.5mA 1000 2000 1.3 1.9 V V Min. 90 5 10 10 Typ. Max. Units V V µA µA Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
On Characteristics
Thermal Characteristics TA=25°C unless otherwise noted
Symbol PD RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance,... |
| Document |
 BSP52 Data Sheet
PDF 37.25KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP50 |
NXP |
NPN Darlington transistors |
|
| 2 | BSP50 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors |
|
| 3 | BSP50 |
nexperia |
NPN Darlington transistor |
|
| 4 | BSP50 |
Fairchild Semiconductor |
NPN Darlington Transistor |
|
| 5 | BSP51 |
NXP |
NPN Darlington transistors |
|
| 6 | BSP51 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors |
|
Desde 2024. D4U Semiconductor.
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