Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BSP50 |
| Part Number | BSP50 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Darlington Transistor |
| Description | BSP50 BSP50 NPN Darlington Transistor • This device is designed for applications requiring extremly high current gain at collector currents to 500mA. • Sourced from process 03. 2 1 4 3 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCER V. |
| Features | sat) Parameter Test Conditions IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCE = 45V, VBE = 0 VEB = 4.0V, IC = 0 IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 500mA, IB = 0.5mA IC = 500mA, IB = 0.5mA 1000 2000 1.3 1.9 V V Min. 60 5 50 50 Typ. Max. Units V V nA nA Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Em. |
BSP50 |
| Part Number | BSP50 |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon Darlington Transistors |
| Description | NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 - BSP62 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BSP50-BSP52 43 2 1 Type BSP50 BSP51 BSP52 Marking BSP50 1=B BSP51 1=B BSP52 1=B Pin . |
| Features | n. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BSP50 IC = 10 mA, IB = 0 , BSP51 IC = 10 mA, IB = 0 , BSP52 V(BR)CEO 45 60 80 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BSP50 IC = 100 µA, IE = 0 , BSP51 IC = 100 µA, IE = 0 , BSP52 V(BR)CBO 60 80 90 - - Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff cu. |
BSP50 |
| Part Number | BSP50 |
| Manufacturer | nexperia |
| Title | NPN Darlington transistor |
| Description | NPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP60 2. Features and benefits • High current of 1 A • Low voltage of 45 V • Integrated diode and resistor • AEC-Q101 qualified 3. Applications • Industrial high gain amplification 4. Quick reference data Table 1. Quick refe. |
| Features |
and benefits
• High current of 1 A • Low voltage of 45 V • Integrated diode and resistor • AEC-Q101 qualified 3. Applications • Industrial high gain amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCBO VCES collector-base voltage collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open emitter b. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP51 |
NXP |
NPN Darlington transistors |
|
| 2 | BSP51 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors |
|
| 3 | BSP52 |
Fairchild Semiconductor |
NPN Darlington Transistor |
|
| 4 | BSP52 |
NXP |
NPN Darlington transistors |
|
| 5 | BSP52 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors |
|
| 6 | BSP52T1 |
Motorola Inc |
MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT |
|
| 7 | BSP52T1 |
ON Semiconductor |
MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT |
|
| 8 | BSP52T1G |
ON Semiconductor |
NPN Small-Signal Darlington Transistor |
|
| 9 | BSP52T3 |
ON Semiconductor |
(BSP52T1 / BSP52T3) NPN Small-Signal Darlington Transistor |
|
| 10 | BSP52T3G |
ON Semiconductor |
NPN Small-Signal Darlington Transistor |
|
Desde 2024. D4U Semiconductor.
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