BSP373 |
Part Number | BSP373 |
Manufacturer | Siemens Semiconductor Group |
Description | BSP 373 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 373 Type BSP 373 VDS 100 V ID 1.7 A RDS... |
Features |
A RthJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
100 3 0.1 10 10 0.16 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 0 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.3
VGS = 20 V, VDS = 0 V
Drain-Sou... |
Document |
BSP373 Data Sheet
PDF 168.35KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP372 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor | |
2 | BSP372 |
Infineon Technologies AG |
SIPMOS Small-Signal Transistor | |
3 | BSP372N |
Infineon Technologies |
Small-Signal-Transistor | |
4 | BSP373 |
Infineon Technologies AG |
SIPMOS Small-Signal Transistor | |
5 | BSP373N |
Infineon Technologies |
Small-Signal-Transistor | |
6 | BSP30 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |