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BSP171P |
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| Part Number | BSP171P |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSP 171 P Preliminary data SIPMOS® Power Transistor • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated Pin 1 G Type BSP 171 P VDS -60 V ID RDS(on) Pin2/4 D Pin 3 S -1.8 A ... |
| Features |
171 P
Preliminary data Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Thermal resistance, junction -soldering point (Pin 4) Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling areaF) RthJS RthJA RthJA tbd tbd 70 Symbol min. Values typ. tbd max. tbd K/W Unit
Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA Gate threshold voltage, VGS = VDS ID = -460 µA, Tj = 25 °C Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = -40 °C VDS = -60 V, VGS = 0 V, Tj = ... |
| Document |
 BSP171P Data Sheet
PDF 60.23KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP171 |
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| 2 | BSP171P |
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| 3 | BSP17 |
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| 4 | BSP170 |
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| 5 | BSP170P |
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| 6 | BSP170P |
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Desde 2024. D4U Semiconductor.
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