BSP171 |
Part Number | BSP171 |
Manufacturer | Siemens Semiconductor Group |
Description | BSP 171 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = -0.8...-2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 171 Type BSP 171 VDS -60 ... |
Features |
Unit °C
Tj Tstg RthJA RthJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
-60 -1.4 -0.1 -10 -10 0.22 -2
V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
-0.8
VGS=VDS, ID = -1 mA
Zero gate voltage drain current
IDSS
-1 -100
µA
VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
-100
nA Ω 0... |
Document |
BSP171 Data Sheet
PDF 101.21KB |
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